Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-14
2006-11-14
Smith, Mathew S. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S677000, C205S219000
Reexamination Certificate
active
07135404
ABSTRACT:
The present invention is directed to a process for producing structures containing metallized features for use in microelectric workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and the metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
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Baskaran Rajesh
Chen Linlin
Graham Lyndon W
Kim Bioh
Malsawma Lex H.
Semitool Inc.
Smith Mathew S.
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