Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-12-19
1986-05-20
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG80, 156102, C30B 1324
Patent
active
045899517
ABSTRACT:
A large single-crystalline film on an amorphous insulator is formed by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film on the insulator is controlled to occur from the central region toward the outer edge of the molten zone. This control is accomplished by using, for example, a doughnut-shaped laser beam.
REFERENCES:
patent: 4059461 (1977-11-01), Fan et al.
patent: 4199397 (1980-04-01), Gurtler
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4388145 (1983-06-01), Hawkins et al.
J. Electrochem. Soc., Solid-State Science and Tech., 9/81, pp. 1981-1986, Lam et al.
Bean et al, Appl. Phys. Letters, 33 (3), 8/1/78, pp. 227-230.
"Annealing of Radiation Defects by Laser Radiation Pulses", G. A. Kachurin, N. B. Pridachin, and L. S. Smirnov, Soviet Physics Semiconductors, p. 46.
"CW Laser Recrystallization of <100>Si on Amorphous Substrates", J. F. Gibbons and K. F. Lee, Appl. Phys. Lett., 34(12), p. 831-832.
Bernstein Hiram H.
Fujitsu Limited
LandOfFree
Method for annealing by a high energy beam to form a single-crys does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for annealing by a high energy beam to form a single-crys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for annealing by a high energy beam to form a single-crys will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2107072