Method for annealing by a high energy beam to form a single-crys

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156DIG80, 156102, C30B 1324

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active

045899517

ABSTRACT:
A large single-crystalline film on an amorphous insulator is formed by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film on the insulator is controlled to occur from the central region toward the outer edge of the molten zone. This control is accomplished by using, for example, a doughnut-shaped laser beam.

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"Annealing of Radiation Defects by Laser Radiation Pulses", G. A. Kachurin, N. B. Pridachin, and L. S. Smirnov, Soviet Physics Semiconductors, p. 46.
"CW Laser Recrystallization of <100>Si on Amorphous Substrates", J. F. Gibbons and K. F. Lee, Appl. Phys. Lett., 34(12), p. 831-832.

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