Method for annealing by a high energy beam to form a single-crys

Details Method for annealing by a high energy beam to form a single-crys Method for annealing by a high energy beam to form a single-crys

1984-12-19

1986-05-20

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG80, 156102, C30B 1324

Patent

active

045899517

ABSTRACT:
A large single-crystalline film on an amorphous insulator is formed by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film on the insulator is controlled to occur from the central region toward the outer edge of the molten zone. This control is accomplished by using, for example, a doughnut-shaped laser beam.

REFERENCES:
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patent: 4199397 (1980-04-01), Gurtler
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4388145 (1983-06-01), Hawkins et al.
J. Electrochem. Soc., Solid-State Science and Tech., 9/81, pp. 1981-1986, Lam et al.
Bean et al, Appl. Phys. Letters, 33 (3), 8/1/78, pp. 227-230.
"Annealing of Radiation Defects by Laser Radiation Pulses", G. A. Kachurin, N. B. Pridachin, and L. S. Smirnov, Soviet Physics Semiconductors, p. 46.
"CW Laser Recrystallization of <100>Si on Amorphous Substrates", J. F. Gibbons and K. F. Lee, Appl. Phys. Lett., 34(12), p. 831-832.

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