Method for anisotropic dry etching of metallization layers, cont

Details Method for anisotropic dry etching of metallization layers, cont Method for anisotropic dry etching of metallization layers, cont

1992-03-05

1994-01-11

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156665, 20419225, 20419232, H01L 2100

Patent

active

052777502

ABSTRACT:
A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask. Etching is performed with a strictly anisotropically attacking etching gas mixture containing an iodine compound being volatile under normal conditions, wherein an accurately defined vertical profile of the conduction lines is formed.

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D. Widman et al., "Technologie hochintegrierter Schaltungen", Springer Verlag, 1988, Berlin, Par. 5.2.3, 5.2.5, 5.3.6.
D. Bollinger et al., "Reactive Ion Etching: Its Basis and Future", Solid State Technology, May 1984, pp. 111-117.
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Ibbotson et al., "Plasmaless dry etching of silicon with fluorine-containing compounds", J. Appl. Phys. 56(10), Nov. 15, 1984, pp. 2939-2942.
L. Colombo et al., "Plasma Etching of Aluminum Alloys for Submicron Technologies", Solid State Tech., Feb. 1990, pp. 95-100.

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