Method for analysis of silicon wafers

Details Method for analysis of silicon wafers Method for analysis of silicon wafers

1996-08-27

1998-01-13

Regan, Maura K.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324767, 324765, 324762, G01R 2726

Patent

active

057083657

ABSTRACT:
A simple method for evaluating the dielectric breakdown of an oxide layer on a silicon wafer is disclosed. The SPV method is utilized to measure a diffusion length L.sub.on of minority carriers when the silicon wafer is illuminated by white light from another source and a diffusion length L.sub.off of the minority carriers when the silicon wafer is not illuminated by white light from another source. A diffusion length L.sub.safe, which is determined by trap sites in the silicon wafer, is calculated from an equation L.sub.safe =(L.sub.off.sup.-2 -L.sub.on.sup.-2).sup.-1/2. Since L.sub.safe has a strong correlation with the dielectric breakdown of the oxide layer, the dielectric breakdown of the oxide layer can be easily evaluated by L.sub.safe during the fabrication of the silicon wafer.

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