Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-10-16
2007-10-16
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
C438S736000, C438S725000, C438S634000, C438S690000, C438S734000, C438S735000, C438S737000, C438S738000, C438S739000, C438S740000, C216S047000, C257SE21490
Reexamination Certificate
active
10923060
ABSTRACT:
A process is provided for forming vertical contacts in the manufacture of integrated circuits and devices. The process eliminates the need for precise mask alignment and allows the etch of the contact hole to be controlled independent of the etch of the interconnect trough. The process includes forming an insulating layer on the surface of a substrate; forming an etch stop layer on the surface of the insulating layer; forming an opening in the etch stop layer; etching to a first depth through the opening in the etch stop layer and into the insulating layer to form an interconnect trough; forming a photoresist mask on the surface of the etch stop layer and in the trough; and continuing to etch through the insulating layer until reaching the surface of the substrate to form a contact hole. The process may be repeated during the formation of multilevel metal integrated circuits.
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Dennison Charles H
Doan Trung T.
Ahmadi Mohsen
Lebentritt Michael
Micro)n Technology, Inc.
TraskBritt
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