Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1996-08-22
1999-02-16
Niebling, John F.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438637, 438975, H01L 21465
Patent
active
058720421
ABSTRACT:
The contact or via hole etch pattern photomask used in fabrication of integrated circuits is modified to provide a series of grooves or trenches to be etched in the silicon oxide layer simultaneously with the contact or via holes. These trenches, after deposition and planarization of tungsten metal layer, afford regenerated alignment marks with sharply-defined edges even after deposition of a second conductive layer.
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Hsu Shun-Liang
Jang Syun-Ming
Lin Chang-Song
Ackerman Stephen B.
Nguyen Ha Tran
Niebling John F.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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