Method for adjusting the density of lines and contact openings a

Boots – shoes – and leggings

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

364489, 364490, 364491, G06F 1700, G06F 1750

Patent

active

061097756

ABSTRACT:
Disclosed is the formation of additional lines, either dummy lines or active lines, in an electrically conductive pattern of lines to provide more uniform loading for either etching or chemical/mechanical polishing of a layer of electrically conductive material from which the pattern of lines is formed. Also disclosed is the use of additional or dummy vias to balance the loading during etching of the vias, as well as to provide stress relief for underlying metal in regions or areas having a low density of vias. Further disclosed is the use of a working grid on the integrated circuit structure to analyze the spacing of lines or vias for the above effects.

REFERENCES:
patent: 4520269 (1985-05-01), Jones
patent: 4654269 (1987-03-01), Leher
patent: 4707770 (1987-11-01), Pasch et al.
patent: 4717644 (1988-01-01), Jones et al.
patent: 4761560 (1988-08-01), Glendinning
patent: 4812962 (1989-03-01), Witt
patent: 4879257 (1989-11-01), Patrick
patent: 5023205 (1991-06-01), Reche
patent: 5242770 (1993-09-01), Chen et al.
patent: 5379233 (1995-01-01), Tripathi et al.
patent: 5387550 (1995-02-01), Cheffings et al.
patent: 5494853 (1996-02-01), Lur
patent: 5532516 (1996-07-01), Pasch et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for adjusting the density of lines and contact openings a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for adjusting the density of lines and contact openings a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for adjusting the density of lines and contact openings a will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1242104

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.