Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-30
1999-03-09
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438131, 438132, 257 48, H01L 2166
Patent
active
058800166
ABSTRACT:
Adjusting elements (R1, R2 and R3) are redundantly or preliminarily built in an IC circuit body (5), the adjusting elements (R1, R2 and R3) are connected to one another through conductor patterns (P1, P2 and P3) provided outside the circuit body (5), and after the circuit operating function is confirmed by inspection, the conductor patterns (P1, P2 and P3) are selectively cut to select an adjusting element to be used, thereby to adjust or select a function of the circuit body.
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Sada Ryuichi
Watanabe Shigemitsu
Bowers Charles
Mitsumi Electric Co. Ltd.
Sulsky Martin
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