Method for adjusting initial position of melt surface

Details Method for adjusting initial position of melt surface Method for adjusting initial position of melt surface

1999-01-07

2000-01-04

Hiteshew, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117201, 117202, C30B 1526

Patent

active

060105682

ABSTRACT:
An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.

REFERENCES:
patent: 3621213 (1971-11-01), Jen et al.
patent: 5286461 (1994-02-01), Kozioh et al.

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