Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-03-06
2007-03-06
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
10732608
ABSTRACT:
A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. That is, if a small adjustment in one or more dimensions of a photomask is desired, the photomask may be exposed to the deionized water and ozone solution for only a few moments, whereas if a much larger adjustment is necessary, the photomask may be exposed to the solution for several hours. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20–30 nanometers or more.
REFERENCES:
patent: 4747907 (1988-05-01), Acocella et al.
patent: 6436723 (2002-08-01), Tomita et al.
patent: 6503852 (2003-01-01), Hosono et al.
patent: 2002/0160274 (2002-10-01), Buxbaum et al.
patent: 2003/0025216 (2003-02-01), Inazuki et al.
patent: WO 87/06027 (1987-10-01), None
patent: WO 03/010601 (2003-02-01), None
Buie et al., “Chrome Etch for <0.13 um Advanced Reticle Production,” Applied Materials Photomask Etch, Sunnyvale, CA., date unknown, pp. 1-8.
Baugh Jim R.
Rasmussen Robert T.
Micro)n Technology, Inc.
Rosasco S.
TraskBritt
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