Method for activating P-type semiconductor layer

Details Method for activating P-type semiconductor layer Method for activating P-type semiconductor layer

2005-02-04

2008-05-06

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S475000, C438S758000, C438S788000, C257SE21212

Reexamination Certificate

active

07368369

ABSTRACT:
A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.

REFERENCES:
patent: 5059551 (1991-10-01), Chevallier et al.
patent: 6313035 (2001-11-01), Sandhu et al.
patent: 6475923 (2002-11-01), Mitamura
patent: 6521999 (2003-02-01), Uemura et al.
patent: 2004/0107833 (2004-06-01), Sweeney et al.

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