Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-04-22
2000-10-31
Woodward, Michael P.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438149, 438162, H01L 21786
Patent
active
061401595
ABSTRACT:
An ohmic layer of CMOS TFT is activated at temperature less than 550.degree. C. by doping N-type and P-type dopants into polycrystal semiconductor to form CMOS thin film transistor and then implanting hydrogen ions into CMOS thin film transistor into which the N-type ions and the P-type ions are doped. The hydrogen ions are generated from a plasma which is produced from a hydrogen containing gas(e.g., phosphine or diborane) and the implantation of the hydrogen ions is carried out by a magnetic mass spectroscopy or an ion doping apparatus in the same chamber where the doping of the N-type ions and the P-type ions is carried out.
REFERENCES:
patent: 5141885 (1992-08-01), Yoshida et al.
patent: 5198371 (1993-03-01), Li
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5567633 (1996-10-01), Gosain et al.
patent: 5620906 (1997-04-01), Yamaguchi et al.
patent: 5677211 (1997-10-01), Kaneko et al.
Concise English Statement of Relevance of Japanese Patent Laid Open 4-124879.
Concise English Statement of Relevance of Japanese Patent Laid Open 5-175232.
Concise English Statement of Relevance of Japanese Patent Laid Open 64-81366.
Mimura et al., A 10 s Doping Technology for the Application of Low-Temperature Polysilicon TFT's to Giant Microelectgronics, 40 (3) :513-518 Mar. 1993.
Borin Michael
LG Electronics Inc.
Woodward Michael P.
LandOfFree
Method for activating an ohmic layer for a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for activating an ohmic layer for a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for activating an ohmic layer for a thin film transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2050370