Method for achieving low capacitance diffusion pattern filling

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

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438 14, 438 16, 438 18, G01R 3126, H01L 2166

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active

059239476

ABSTRACT:
An automated method for selectively locating fill pattern diffusion regions on a semiconductor substrate. In one embodiment, the present invention determines the locations of active diffusion regions on a semiconductor substrate. The present invention also determines the locations of interconnect lines on the semiconductor substrate. Next, the present invention creates a union of the location of the active diffusion regions on the semiconductor substrate and the location of the interconnect lines on the semiconductor substrate. The present invention uses this union to define allowable locations for placement of fill pattern diffusion regions on the semiconductor substrate such that the fill pattern diffusion regions are not disposed under the interconnect lines.

REFERENCES:
patent: 5037771 (1991-08-01), Lipp
patent: 5104823 (1992-04-01), Mand
patent: 5256564 (1993-10-01), Narita
patent: 5434089 (1995-07-01), Barthez
patent: 5462882 (1995-10-01), Chisholm et al.
patent: 5627083 (1997-05-01), Tounai
patent: 5663076 (1997-09-01), Rostoker et al.

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