Method for accurate patterning of photoresist during lithography

Details Method for accurate patterning of photoresist during lithography Method for accurate patterning of photoresist during lithography

1998-01-30

2000-02-22

Gibson, Sharon

Radiation imagery chemistry: process, composition, or product th

Effecting frontal radiation modification during exposure,...

430311, 430322, 355 53, 355 67, 355 71, G03C 500

Patent

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06027865&

ABSTRACT:
A method is provided for accurate patterning of photoresist during lithography process. A photoresist layer is deposited on a surface of a semicondictor wafer. The photoresist layer is then illuminated using a lithography apparatus including a mask, a two-thirds annular aperture stop and a quadra pole aperture stop. Portions of the photoresist layer are removed to provide a resulting patterned photoresist layer.

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patent: 5631773 (1997-05-01), Suzuki
patent: 5724122 (1998-03-01), Oskotsky
patent: 5726740 (1998-03-01), Shiozawa et al.
patent: 5739899 (1998-04-01), Nishi et al.
patent: 5844727 (1998-12-01), Partlo

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