Method for accurate growth of vertical-cavity surface-emitting l

Details Method for accurate growth of vertical-cavity surface-emitting l Method for accurate growth of vertical-cavity surface-emitting l

1993-07-26

1995-03-14

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 7, 117 86, H01L 2120

Patent

active

053977394

ABSTRACT:
We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.

REFERENCES:
patent: 5256596 (1993-10-01), Ackley et al.
patent: 5258316 (1993-11-01), Ackley et al.
S. A. Chalmers et al. "Method for Accurate Growth of Vertical-Cavity Surface-Emitting Lasers," Appl. Phys. Lett. 62(11), 15 Mar. 1993, pp. 1182-1184.
K. Bacher, et al. "Molecular Beam Epitaxy Growth of Vertical Cavity Optical Devices with in situ Corrections," Appl. Phys. Lett 61(12) 21 Sep. 1992 pp. 1387-1389.
C. Lavoie et al. "Diffuse Optical Reflectivity Measurements on GaAs During Molecular Beam Epitaxy Processing," J. Vac. Sci. Technol. A 10(4), Jul/Aug. 1992, pp. 930-933.
D. E. Aspnes et al. "Real-Time Optical Diagnostics for Epitaxial Growth," J. Vacuum Sci. Technol. A 9(3) May/Jun. 1991, pp. 870-875.

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