Method for accessing data on magnetic memory

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S173000

Reexamination Certificate

active

11468302

ABSTRACT:
A method for accessing data on a magnetic memory is provided, wherein the data is accessed in a toggle mode. A first current line and a second current line are used for providing operation currents. The data accessing method includes a data changing operation for changing a data stored in a magnetic memory cell. During a first stage, a current in a first direction is supplied to the first current line, and a current in the first direction is simultaneously supplied to the second current line. During a stage before stopping supplying magnetic field, a current in the first direction is supplied to the first current line, and a current in the first direction is simultaneously supplied to the second current line to offset at least a portion of the biased magnetic field.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6633498 (2003-10-01), Engel et al.
patent: 2006/0268470 (2006-11-01), Fukuzawa et al.
patent: 2007/0047158 (2007-03-01), Hayashi et al.
patent: 2007/0063690 (2007-03-01), De Wilde et al.

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