Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1980-09-26
1983-10-25
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
C30B 2518
Patent
active
044117299
ABSTRACT:
In the vapor phase epitaxy (VPE) method employed for growth of a compound semiconductor, a high resistivity GaAs buffer layer and a low resistivity GaAs active layer are successively grown on a GaAs substrate in a VPE reaction tube. A GaAs substrate having a crystallographic orientation different from that of the GaAs substrate is positioned just above and opposite to the GaAs substrate, thereby decreasing the epitaxial growth rate and impurities in the epitaxial buffer layer grown on the GaAs substrate. To grow the low resistivity active layer, the dummy substrate is moved away from the GaAs substrate downstream from the gas flow direction. This method provides for a low impurity concentration in the buffer layer and a steep doping distribution between the grown epitaxial layers. Advantageously, the yield of the VPE method is enhanced and the noise figure of FETs produced by this VPE method is decreased.
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Bernstein Hiram H.
Fujitsu Limited
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