Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-10-11
1999-06-29
Booth, Richard A.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438643, 438653, 438677, 438639, H01L 213065
Patent
active
059181508
ABSTRACT:
A method for etching a metallic surface on an integrated circuit (IC) is provided to minimize electrical resistance between the metallic surface and subsequently applied chemical vapor deposition (CVD) copper. The metallic surface is etched with the ions of an inert gas, such as Ar, at low energy levels. A low energy level minimizes the penetration of ions into the metallic surface, and the use of an inert gas minimizes chemical interactions between the metallic surface and the ions. CVD copper is then applied to the etched surface. In one embodiment, an inert gas and oxygen ions are used to prepare the metallic surface. The inert gas ions are used to etch the metallic surface to improve conductivity, and the oxygen ions promote the formation of an oxide layer to improve adhesion between the metallic surface and the copper. An IC comprising a copper stud to interconnect dielectric interlevels with improved electrical conductivity is also provided. In one embodiment, the copper stud is interfaced to diffusion barrier material, in another embodiment the copper stud is interfaced to a metallic surface.
REFERENCES:
patent: 4800179 (1989-01-01), Mukai
patent: 5130274 (1992-07-01), Harper et al.
patent: 5236869 (1993-08-01), Takagi et al.
patent: 5554254 (1996-09-01), Huang et al.
patent: 5618619 (1997-04-01), Petrmichl et al.
patent: 5670421 (1997-09-01), Nishitani et al.
patent: 5674787 (1997-10-01), Zhao et al.
Maa Jer-shen
Nguyen Tue
Booth Richard A.
Maliszewski Gerald
Nguyen Ha Tran
Ripma David
Sharp Kabushiki Kaisha
LandOfFree
Method for a chemical vapor deposition of copper on an ion prepa does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for a chemical vapor deposition of copper on an ion prepa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for a chemical vapor deposition of copper on an ion prepa will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1386572