Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2005-01-04
2005-01-04
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Signals
C365S194000, C365S233100
Reexamination Certificate
active
06839290
ABSTRACT:
According to one aspect of the invention, a method is provided in which a write strobe signal is generated to latch output data into a memory unit that comprises one or more dual data rate synchronous dynamic random access memory (DDR-SDRAM) devices. The write strobe signal has an edge transition at approximately the center of a data window corresponding to the output data. A first receive clock signal is delayed by a first delay period using a delay locked loop (DLL) circuit to generate a first delayed receive clock signal. The first delayed receive clock signal is used to latch incoming data from the memory unit.
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Ahmad Abid
Saxena Alankar
Shah Katen
Intel Corporation
Le Thong Q.
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