Method and test structure for monitoring CMP processes in...

Details Method and test structure for monitoring CMP processes in... Method and test structure for monitoring CMP processes in...

2008-07-01

2010-11-09

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S633000, C438S645000

Reexamination Certificate

active

07829357

ABSTRACT:
By forming a large metal pad and removing any excess material thereof, a pronounced recessed surface topography may be obtained, which may also affect the further formation of a metallization layer of a semiconductor device, thereby increasing the probability of maintaining metal residues above the recessed surface topography. Consequently, by providing test metal lines in the area of the recessed surface topography, the performance of a respective CMP process may be estimated with increased efficiency.

REFERENCES:
patent: 5952674 (1999-09-01), Edelstein et al.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 057 684.8 dated Oct. 28, 2008.

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