Method and test structure for evaluating threshold voltage...

Details Method and test structure for evaluating threshold voltage... Method and test structure for evaluating threshold voltage...

2007-02-27

2007-02-27

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Testing

C365S185240

Reexamination Certificate

active

11104421

ABSTRACT:
A method for evaluating threshold voltage distribution of memory cells. The method comprises connecting all sources and drains of memory cells in a memory array to a fixed voltage; measuring charge pumping current characteristic of a single memory cell versus a first gate voltage and second gate voltage respectively. The total charge pumping current characteristic of a memory array is then measured versus a first gate voltage and second gate voltage respectively. The charge pumping current characteristics of the single memory cell is compared to that of the memory array to obtain a range of threshold voltage distribution.

REFERENCES:
patent: 6285588 (2001-09-01), Fastow
patent: 06060700 (1994-03-01), None

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