Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1995-05-10
1997-08-12
Chaudhari, Chandra
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
H01L 2166
Patent
active
056565097
ABSTRACT:
In one aspect of the present invention, a method includes the steps of providing a first test cell electrically isolated from the substrate, unexposed to the SAS etch and having a first core profile. The method further includes providing a second test cell electrically isolated from the substrate, exposed to the SAS etch, and having a second core profile. Additionally, the method includes performing the SAS etch, measuring electrical characteristics of the first and second cells, and comparing the measured electrical characteristics to determine an amount of gouging. In a further aspect of the present invention, a method includes the steps of forming a pair of test structures in electrical isolation of a substrate of the cell, and measuring resistance values for each of the pair of test structures to determine the amount of gouging. In addition, the method includes protecting one of the pair of test structures from the SAS etch.
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patent: 5057462 (1991-10-01), Eisenberg et al.
patent: 5120671 (1992-06-01), Tang et al.
patent: 5264377 (1993-11-01), Chesire et al.
patent: 5381105 (1995-01-01), Phipps
patent: 5470773 (1995-11-01), Liu et al.
Advanced Micro Devices , Inc.
Chaudhari Chandra
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