Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2002-12-13
2004-11-02
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Resistive
C365S113000, C365S163000
Reexamination Certificate
active
06813177
ABSTRACT:
BACKGROUND
Phase change materials that are used in memory devices may exhibit at least two different states and therefore may be used to store a bit of data. These states may be referred to as the amorphous and crystalline states. These states may be distinguished since the amorphous state generally exhibits higher resistivity than the crystalline state. Generally, the amorphous state involves a more disordered atomic structure.
Phase change materials in a memory cell may be programmed by altering a resistance of the material. However, variations in the materials, fabrication processes, and operating environment may cause the resistance of a phase change material to vary or drift after the phase change material is programmed. Thus, some cells originally programmed to one state may undesirably change to a different state after programming or the resistance of some cells may drift to a level that may not provide for adequate sense margins between the states.
REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3530441 (1970-09-01), Ovshinsky
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5541869 (1996-07-01), Rose et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5933365 (1999-08-01), Klersy et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6002140 (1999-12-01), Gonzalez et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6085341 (2000-07-01), Greason et al.
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6229157 (2001-05-01), Sandhu
patent: 6570784 (2003-05-01), Lowrey
patent: 6625054 (2003-09-01), Lowrey et al.
patent: 6687153 (2004-02-01), Lowrey
US patent application, pending, 09/895,135, filed Jun. 29, 2001, Tyler Lowrey (P11409), US patent No. 6,570,784.
US patent application , pending, 10/034,146, filed Dec. 28, 2001, Manzur Gill et al. (P12860), U.S. patent No. 6,625,054.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” presented at 2003 19thIEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 26-20, 2003.
Ha, Y.H., Yi, J.H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U-In and Moon, J.T., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Oh, J.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Chung, U.I., Jeong, H.S., and Kim, Kinam, “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24 mm-CMOS Technologies,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Horii, H., Yi, J.H., Park, J.H., Ha, Y.H., Baek, I.G., Park., S.O., Hwang, Y.N., Lee, S.H., Kim, Y.T., Lee, K.H., Chung, U-In and Moon, J.T., “A Novel Cell Technology Using N-doped GeSbTe Films for PhaseChange Ram,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Lowrey Tyler A.
Parkinson Ward D.
Nguyen Tan T.
Ovoynx, Inc.
Trop Pruner & Hu P.C.
LandOfFree
Method and system to store information does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and system to store information, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system to store information will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3288099