Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2007-07-31
2007-07-31
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S689000, C438S706000, C438S745000, C257SE21008, C257S499000, C257S503000
Reexamination Certificate
active
11094101
ABSTRACT:
A MEMs (microelectromechanical systems) structure is provided. In one implementation, the MEMs structure includes a substrate wafer including a MEMs device formed on a surface of the substrate wafer, and a MEMs cover structure to cover the MEMs device formed on the surface of the substrate wafer. The MEMs cover structure comprises a first wafer bonded to a second wafer, in which only the first wafer of the MEMs cover structure is sawed through and not the second wafer of the MEMs cover structure during dicing of the MEMs structure.
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Flannery, Jr. Anthony Francis
Lim Martin
Nasiri Steven S.
InvenSense Inc.
Nhu David
Sawyer Law Group LLP
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