Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2006-04-24
2009-11-03
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S689000
Reexamination Certificate
active
07611960
ABSTRACT:
Disclosed is a method and a system for wafer backside alignment. A zero mark patterning on front side of a substrate. A plurality of layers are deposited on the front side of the substrate. The wafer is flipped over with backside of the substrate facing up, and a through wafer etching is performed from the backside to an etch stop layer deposited over the front side of the substrate.
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Taiwan Office Action issued Mar. 13, 1998, Application No. 095132490.
Kao Chia-Hung
Lee Yuan-Bang
Liu Sheng-Chieh
Pan Sheng-Liang
Wu Tzu-Yang
Haynes and Boone LLP
Lindsay, Jr. Walter L
Taiwan Semiconductor Manufacturing Company , Ltd.
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