Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-21
2011-06-21
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S166000, C438S795000
Reexamination Certificate
active
07964453
ABSTRACT:
The manufacturing methodology to produce polycrystalline silicon in time and cost efficient manner uses a spatially selective crystallization approach to greatly reduce the amount of energy delivered to the work surface. The amorphous silicon film is subjected to laser radiation substantially exclusively at localized areas where TFTs are to be formed. The source of radiation is a copper vapor laser which produces a highly stable radiation in a visible spectrum with an energy sufficient to convert amorphous silicon into polysilicon in 1-3 shots. The optic system delivers the homogenized, conditioned and focused laser beam to the area of interest in a controlled manner. Single or multi-laser beam arrangements, as well as different shapes and sizes of laser beam spots are contemplated.
REFERENCES:
patent: 5413958 (1995-05-01), Imahashi et al.
patent: 6008101 (1999-12-01), Tanaka et al.
patent: 6322625 (2001-11-01), Im
patent: 6979605 (2005-12-01), Yamazaki et al.
patent: 7338913 (2008-03-01), Kasahara et al.
patent: 7709378 (2010-05-01), Im
G. Andra, et al. “Modeling the Preparation of PC-SI Thin Films with a CU Vapor Laser”, Applied Physics, A67, pp. 513-516, 1998.
D. Good, “Novel Processes for Poly-Si Thin-Film Transistors on Plastic Substrates”, Thesis, Electrical Engineering and Computer Sciences. University of California, Berkeley, Spring 2007.
Christensen Paul
Doudoumopoulos Nicholas
Wickboldt Paul
Luu Chuong A.
Potomac Photonics, Inc.
Rosenberg , Klein & Lee
LandOfFree
Method and system for spatially selective crystallization of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and system for spatially selective crystallization of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for spatially selective crystallization of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2727302