Method and system for single ion implantation

Details Method and system for single ion implantation Method and system for single ion implantation

2006-02-21

2006-02-21

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000

Reexamination Certificate

active

07002166

ABSTRACT:
This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.

REFERENCES:
patent: 5539203 (1996-07-01), Ohdomari
patent: 5929645 (1999-07-01), Aton
patent: 5945677 (1999-08-01), Leung et al.
patent: 2001-015059 (2001-01-01), None
patent: WO 99/14614 (1999-03-01), None
patent: WO 01/80980 (2001-11-01), None
patent: WO 02/18266 (2002-03-01), None
patent: WO 02/19036 (2002-03-01), None
Shinada et al., Current status of single ion implantation, Journal of Vacuum Science Technologies B, vol. 16 No. 4, (1998), pp 2489-2493.
Koh et al., Quantitative characterization of S/SiO.sub.2 interface traps induced by energetic ions by means of single ion microprobe and single ion beam induced charge imaging, Applied Surface Science, 117/118, (1997), pp 171-175.
Millar et al., Nanoscale fabrication using single-ion impacts [online], Proceedings of SPIE: BioMEMS and Smart Nanostructures, Nov. 2001, 4590, p. 173-78, URL:http://www.ph.unimelb.edu.au/src/SRCpapers
anafab.pdf.
Buehler et al., Self-aligned process for silicon quantum computer devices [online], Aug. 29, 2002, URL:http://arxiv.org/PS—cache/cond-mat/pdf/0208/0208374.pdf.
Schenkel et al., Single ion implantation with low energy highlt charged ions [online], Abstract for the 14thInternational Conference on Ion Implantation Technology, IIT 2002, Sep. 22-27, 2002, Taos, NM, URL:http://www.iit2002.com/Abstracts/NovelTechniquesCONVERTED/SchenkelA3122.pdf.

Affiliated with

Also associated with

Rating

Method and system for single ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for single ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for single ion implantation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3705990