Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-02-10
2008-07-01
Deo, Duy-Vu (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
C438S700000, C438S734000, C438S720000, C438S742000, C216S067000, C216S075000, C216S079000, C257S412000, C156S345480
Reexamination Certificate
active
07393788
ABSTRACT:
A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the use of fluorohydrocarbons, such as CH2F2and CHF3. High etch selectivity and acceptable uniformity can be achieved by selecting a process condition, including the flow rate of CH2F2and the power coupled to the dry plasma etching system, such that a proper balance of active etching radicals and polymer forming radicals are formed within the etching plasma.
REFERENCES:
patent: 5318668 (1994-06-01), Tamaki et al.
patent: 6093627 (2000-07-01), Sung
patent: 6890863 (2005-05-01), Donohoe et al.
patent: 7008878 (2006-03-01), Hsu et al.
patent: 2005/0009283 (2005-01-01), Chiu et al.
patent: 2006/0016559 (2006-01-01), Kobayashi et al.
patent: 2006/0032585 (2006-02-01), Kai et al.
patent: 2007/0032081 (2007-02-01), Chang et al.
W. Tsai, Journal of Vacuum Science & Technology, vol. B 14(5), Sep./Oct. 1996, pp. 3276-3282.
Angadi Maki
Deo Duy-Vu
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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