Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-03-31
2008-10-14
Chiang, Jack (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
07437693
ABSTRACT:
Disclosed are methods and systems for generating S-parameters. In some embodiments, the methods and systems comprise creating (e.g., extracting, calculating, generating), in part or whole into the development environment, S-parameters of the given netlist, which may be represented in part or whole by S-parameters. This is useful in data abstraction, topology complexity reduction, or data hiding. Some embodiments provide convenient and automated approaches for what is normally a complicated and laborious process. Some embodiments provide the ability to generate S-parameters for the specified part or whole topology netlist. Ports can be specified at any node in the topology. Non-linear devices, e.g., IBIS buffers, diodes, non-linear terminations, can be automatically excluded from generated S-parameter model. Additionally, adding the device package models is an available option. Once generated, S-parameter models can be automatically replaced by the original part or whole topology with a Black Box and the original connections are maintained.
REFERENCES:
patent: 6266629 (2001-07-01), Mallavarpu et al.
patent: 6560567 (2003-05-01), Yechuri
patent: 6618837 (2003-09-01), Zhang et al.
patent: 6850871 (2005-02-01), Barford et al.
patent: 6909978 (2005-06-01), Bostoen et al.
patent: 7038468 (2006-05-01), Verspecht
patent: 2003/0065498 (2003-04-01), Bois et al.
patent: 2004/0243373 (2004-12-01), Sercu et al.
Corey et al., Automatic Netlist Extraction for Measurement-Based Characterization of Off-Chip Interconnect, 1996, IEEE, pp. 1-6.
Liao et al., S-Parameter Based Macro Model of Distributed-Lump Networks Using Exponentially Decayed Polynomial Function, 1993, ACM, pp. 726-731.
Yang et al., Modeling and Simulation of High-Frequency Integrated Circuits Based on Scattering Parameters, 1991, ACM, pp. 752-757.
Formo et al., Advanced Simulation and Modeling Techniques for Hardware Quality Verification of Digital Systems, 1994, ACM, pp. 122-127.
Agilent Technologies “Large-Signal S-Parameter Simulation” Dec. 2003, Title page, Copyright page, Table of Contents, Index, 16 pgs., Agilent Technologies, Palo Alto, CA.
Agilent Technologies “S-Parameter Simulation” Dec. 2003, Title page, Copyright page, Table of Contents, Index, 32 pgs., Agilent Technologies, Palo Alto, CA.
Aydin, K. et al. “Dual-Polarization Radar Measurements and Modeling of Ice Crystals at 95 GHz” Proceedings of the IEEE International Geoscience and Remote Sensing Symposium (IGARRS 2000), Honolulu, HI, Jul. 24-28, 2000, vol. 4, pp. 1587-1589.
Celik, M. et al. “A New Moment Generation Technique for Interconnects Characterized by Measured or Calculated S-Parameters” Proceedings of the IEEE Multi-Chip Module Conference (MCMC '96), Feb. 6-7, 1996, pp. 196-201.
Cherry, P.C. et al. “Obtaining High-Performance Time-Domain Characteristics from Calculated S-Parameters for Various Electronic Package and Interconnection Structures” Proceedings of the 1995 IEEE Antennas and Propagation Society International Symposium, Newport Beach, CA, Jun. 18-23, 1995, vol. 1, pp. 224-227.
Ingelstrom, P. et al. “Goal-Oriented Error-Estimation for S-Parameter Computation” IEEE Transactions on Magnetics, Mar. 2004, vol. 40, No. 2, pp. 1432-1435.
van Rienen, U. et al. “RF Computations with the Finite Integration Technique (FIT) and the Coupled S-Parameter Calculation (CSC)” Proceedings of the 2003 IEEE Antennas and Propagation Society International Symposium, Jun. 22-27, 2003, vol. 2, pp. 980-983.
Ye, X. et al. “Incorporating Two-Port Networks with S-Parameters into FDTD” IEEE Microwave and Wireless Components Letters, Feb. 2001, vol. 11, No. 2, pp. 77-79.
Somaya Nitin Ramchand
Ye Shu
Cadence Design Systems Inc.
Chiang Jack
Doan Nghia M
Vista IP Law Group LLP
LandOfFree
Method and system for s-parameter generation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and system for s-parameter generation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for s-parameter generation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4012432