Method and system for reducing line edge roughness during...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S311000

Reexamination Certificate

active

07846645

ABSTRACT:
A method of mitigating pattern defects, such as critical dimension (CD) bias and line-edge roughness (LER), during a pattern transfer process is described. The method comprises forming one or more layers on a substrate, forming a radiation sensitive mask layer on the one or more layers, and forming a pattern in the radiation sensitive mask layer using a lithographic process. Once the pattern is formed, the edges of the pattern are smoothed by exposing the pattern in the radiation sensitive mask layer to a fluorohydrocarbon-containing plasma. Thereafter, the smoothed pattern in the radiation sensitive mask layer is transferred to one or more of the one or more layers using one or more etching processes.

REFERENCES:
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patent: 2007/0075038 (2007-04-01), Sadjadi et al.
patent: 2008/0045022 (2008-02-01), Kurihara et al.
patent: 0753885 (1997-01-01), None
patent: 2004172312 (2004-06-01), None
patent: 2007324384 (2007-12-01), None
patent: 2006030581 (2006-03-01), None
International Searching Authority, International Search Report and Written Opinion, International Application No. PCT/US2008/086137, Mailed Mar. 12, 2009, 19 pages.

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