Method and system for reducing contact defects using non...

Details Method and system for reducing contact defects using non... Method and system for reducing contact defects using non...

2006-03-21

2006-03-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S689000, C438S740000

Reexamination Certificate

active

07015135

ABSTRACT:
A method and system for providing at least one contact in a semiconductor device. The semiconductor device includes a substrate, an etch stop layer, an interlayer dielectric on the etch stop layer, an anti-reflective coating layer on the interlayer dielectric, and at least one feature below the etch stop layer. A resist mask having an aperture and residing on the anti-reflective coating layer is provided. The aperture is above an exposed portion of the anti-reflective coating layer. The method and system include etching the exposed anti-reflective coating layer and the underlying interlayer dielectric without etching through the etch stop layer, thereby providing a portion of at least one contact hole. The method and system also include removing the resist mask in situ, removing a portion of the etch stop layer exposed in the portion of the contact hole, and filling the contact hole with a conductive material.

REFERENCES:
patent: 6235640 (2001-05-01), Ebel et al.
patent: 6358842 (2002-03-01), Zhou et al.
patent: 6372638 (2002-04-01), Rodriguez et al.
patent: 6376389 (2002-04-01), Subramanian et al.
patent: 6620732 (2003-09-01), Schuegraf
patent: 2001/0008226 (2001-07-01), Hung et al.

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