Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2007-07-24
2009-12-29
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S689000, C438S707000, C438S710000, C257SE21352
Reexamination Certificate
active
07638412
ABSTRACT:
According to one embodiment of the invention, a silicon-on-insulator device includes an insulative layer formed overlying a substrate and a source and drain region formed overlying the insulative layer. The source region and the drain region comprise a material having a first conductivity type. A body region is disposed between the source region and the drain region and overlying the insulative layer. The body region comprises a material having a second conductivity type. A gate insulative layer overlies the body region. This device also includes a gate region overlying the gate insulative layer. The device also includes a diode circuit conductively coupled to the source region and a conductive connection coupling the gate region to the diode circuit.
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Gallia James D.
Krishnan Anand T.
Krishnan Srikanth
Brady III Wade J.
Franz Warren L.
Hu Shouxiang
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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