Method and system for reducing charge damage in...

Details Method and system for reducing charge damage in... Method and system for reducing charge damage in...

2007-08-28

2007-08-28

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S350000, C257S355000

Reexamination Certificate

active

10035606

ABSTRACT:
According to one embodiment of the invention, a silicon-on-insulator device includes an insulative layer formed overlying a substrate and a source and drain region formed overlying the insulative layer. The source region and the drain region comprise a material having a first conductivity type. A body region is disposed between the source region and the drain region and overlying the insulative layer. The body region comprises a material having a second conductivity type. A gate insulative layer overlies the body region. This device also includes a gate region overlying the gate insulative layer. The device also includes a diode circuit conductively coupled to the source region and a conductive connection coupling the gate region to the diode circuit.

REFERENCES:
patent: 5610790 (1997-03-01), Staab et al.
patent: 5892260 (1999-04-01), Okumura et al.
patent: 6521515 (2003-02-01), Kluth
patent: 2002/0109153 (2002-08-01), Ker et al.
patent: 928054 (1999-07-01), None

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