Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-03-06
2007-03-06
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000
Reexamination Certificate
active
11286083
ABSTRACT:
A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.
REFERENCES:
patent: 7102922 (2006-09-01), Hidaka
patent: 2002/0080644 (2002-06-01), Ito
Tetsuya Yamamoto, et al.,Magnetoresistive random access memory operation error by thermally activated reversal, Journal of Applied Physics 97, 10P503 (2005).
John DeBrosse,Circuit Considerations for Spin-Switched MRAM Devices, Nanotechnology Symposium, May 14, 2004.
Diao Zhitao
Ding Yunfei
Wang Lien-Chang
Grandis Inc.
Nguyen Tuan T.
Sawyer Law Group LLP
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