Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-02-13
2009-11-24
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000
Reexamination Certificate
active
07623369
ABSTRACT:
A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
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Chen Eugene
Huai Yiming
Luo Xiao
Wang Lien-Chang
Grandis Inc.
Le Vu A
Renesas Technology Corp.
Virtual Law Partners LLP
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