Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-06-01
2008-03-18
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S157000
Reexamination Certificate
active
07345912
ABSTRACT:
A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
REFERENCES:
patent: 6055178 (2000-04-01), Naji
patent: 6445612 (2002-09-01), Naji
patent: 6757191 (2004-06-01), Ooishi et al.
patent: 6940749 (2005-09-01), Tsang
patent: 6982913 (2006-01-01), Oh et al.
John DeBrosse,Circuit Considerations for Spin-Switched MRAM Devices, Nanotechnology Symposium, May 14, 2004.
John DeBrosse, et al.,A High-Speed 128-kb MRAM Core for Future Universal Memory Applications, IEEE Journal of Solid State Circuits, vol. 39, No. 4, Apr. 2004.
Eugene Y. Chen, et al.,Current Driven Switching of Magnetic Storage Cells Utilizing Spin Transfer and Magnetic Memories Using Such Cells Having Enhanced Read and Write Margins, U.S. Appl. No. 11/476,171 (3861P).
Lien-Chang Wang, et al.,Method and System for Providing Current Balanced Writing for Memory Cells and Magnetic Devices, U.S. Appl. No. 11/286,083 (3735P).
Eugene Y. Chen, et al.,Current Driven Memory Cells Having Enhanced Current and Enhanced Current Symmetry, U.S. Appl. No. 11/361,267 (3753P).
Eugene Y. Chen, et al.,Current Driven Switched Magnetic Storage Cells Having Improved Read and Write Margins and Magnetic Memories Using Such Cells, U.S. Appl. No. 11/260,778 (3725P).
Eugene Y. Chen, et al.,Current Driven Switching of Magnetic Storage Cells Utilizing Spin Transfer and Magnetic Memories Using Such Cells, U.S. Appl. No. 11/217,524 (3691P).
Eugene Y. Chen, et al.,Current Driven Switching of Magnetic Storage Cells Utilizing Spin Transfer and Magnetic Memories Using Such Cells, U.S. Appl. No. 11/217,258 (3671P).
Lien-Chang Wang, et al.,Magnetic Devices Having A Hard Bias Field and Magnetic Memory Devices Using the Magnetic Devices, U.S. Appl. No. 11/192,811 (3648P).
Zhitao Diao et al.,Fast Magnetic Memory Devices Utilizing Spin Transfer and Magnetic Elements Used Therein, U.S. Appl. No. 11/147,944 (3557P).
Zhenghong Qian et al.,Circuitry For Use in Current Switching A Magnetic Cell, U.S. Appl. No. 11/096,626 (3525P).
Chen Eugene Youjun
Huai Yiming
Luo Xiao
Wang Lien-Chang
Grandis Inc.
Le Vu A.
Renesas Technology Corp.
Strategic Patent Group P.C.
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