Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-23
2005-08-23
Tran, Michael (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S443000, C365S209000, C365S066000, C365S074000, C365S097000
Reexamination Certificate
active
06933550
ABSTRACT:
A method and system for providing magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory elements and providing at least one wrapped write line. Each wrapped write line includes a bottom write line and a top write line electrically connected to the bottom write line. The bottom write line resides below a portion of the plurality of magnetic elements, while the top write resides above the portion of the plurality of magnetic elements. The bottom write line carries a first current in a first direction, while the top write line carries a second current in a second direction opposite to the first direction.
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Applied Spintronics Technology, Inc.
Sawyer Law Group LLP
Tran Long
Tran Michael
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