Method and system for providing a drain side pocket implant

Details Method and system for providing a drain side pocket implant Method and system for providing a drain side pocket implant

1997-12-17

2000-08-15

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438262, 438527, 438528, 438529, H01L 218238

Patent

active

061036021

ABSTRACT:
A system and method for providing a memory cell on a semiconductor is disclosed. The memory cell has a source and a drain. The method and system include providing a source implant in the semiconductor, providing a pocket implant in the semiconductor, and providing a drain implant in the semiconductor after the pocket implant is provided. Thus, short channel effects are reduced.

REFERENCES:
patent: 5019527 (1991-05-01), Oshima et al.
patent: 5147811 (1992-09-01), Sakagami
patent: 5258095 (1993-11-01), Nagata et al.
patent: 5286665 (1994-02-01), Muragishi et al.
patent: 5427963 (1995-06-01), Richart et al.
patent: 5510279 (1996-04-01), Chien et al.
patent: 5512503 (1996-04-01), Hong
patent: 5518942 (1996-05-01), Shrivastava
patent: 5744371 (1998-04-01), Kadosh et al.
patent: 5830788 (1998-11-01), Hiroki et al.
patent: 5893739 (1999-04-01), Kadosh et al.
patent: 5903029 (1999-05-01), Hayashika et al.
S. Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, pp. 303-308, 1986.
S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, pp. 589-591, 1990.

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