Static information storage and retrieval – Read/write circuit – Using different memory types
Reexamination Certificate
2005-09-13
2005-09-13
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Using different memory types
C365S185030, C365S185120, C365S185240
Reexamination Certificate
active
06944068
ABSTRACT:
A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
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Mak Alexander K.
Nguyen Khanh T.
Pan Feng
Pham Long C.
Quader Khandker N.
Nguyen N
Parsons Hsue & de Runtz LLP
Phung Anh
SanDisk Corporation
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