Method and system for performing plasma enhanced atomic...

Details Method and system for performing plasma enhanced atomic... Method and system for performing plasma enhanced atomic...

2011-03-01

2011-03-01

Meeks, Timothy H (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

Reexamination Certificate

active

07897217

ABSTRACT:
A method, computer readable medium, and system for vapor deposition on a substrate that introduce a gaseous film precursor to a process space, increase the volume of the process space from a first size to a second size to form an enlarged process space, introduce a reduction gas to the enlarged process space, and form a reduction plasma from the reduction gas. The system for vapor deposition includes a process chamber including a first process space and further including a second process space that includes the first process space and that has a second volume that exceeds the first volume. The first process space is configured for atomic layer deposition, and the second process space is configured for plasma reduction of a layer deposited in the first process space.

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Office Action issued for the People's Republic of China (with English translation) dated Oct. 13, 2010, Patent Application No. 200680051358.0.

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