Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-10-17
2006-10-17
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
07123506
ABSTRACT:
A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.
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Le Son
Min Tai
Shi Xizeng
Wang Po-Kang
Applied Spintronics Technology, Inc.
Headway Technologies Inc.
Sawyer Law Group LLP
Tran Michael
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