Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2005-01-18
2005-01-18
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S014000, C438S018000
Reexamination Certificate
active
06844208
ABSTRACT:
A method for monitoring a dose of a silicon bearing implant is described. The method includes introducing a first implant species through a surface of a semiconductor substrate at a first does of energy level and introducing a silicon bearing species through the surface of the semiconductor substrate at a second dose and a second energy level. The method anneals the semiconductor substrate and measures a sheet resistance value of the surface of the semiconductor substrate. The method also determines the second dose value based upon the surface resistance value.
REFERENCES:
patent: 6754553 (2004-06-01), Wieczorek et al.
Hunag Chin Te
Qiang Xiao Sheng
Su Jin Ming
Wang Li Zi
Lebentritt Michael S.
Owens Beth E.
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
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