Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-07-28
2009-10-13
Lin, Sun J (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07603638
ABSTRACT:
Disclosed is a method and system for modeling statistical leakage current distribution using logarithmic skew-normal distribution by generating statistical data with a statistical analysis method based on Monte-Carlo simulations or based on a pre-characterization response modeling step for a plurality of representative chip-unit models, deriving a plurality of parameters from said statistical data based on a specific class of statistical distributions, scaling said parameters to values used on realistic chip level, and generating leakage-current variation estimates based on said parameters.
REFERENCES:
patent: 6184048 (2001-02-01), Ramon
patent: 6574760 (2003-06-01), Mydill
patent: 7239163 (2007-07-01), Ralston-Good et al.
patent: 2005/0043908 (2005-02-01), Bhavnagarwala et al.
patent: 2007/0156367 (2007-07-01), Kucukcakar et al.
Haeussler Robert
Kinzelbach Harald
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Lin Sun J
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