Method and system for measuring deep trenches in silicon

Details Method and system for measuring deep trenches in silicon Method and system for measuring deep trenches in silicon

2008-05-06

2008-05-06

Nguyen, Tu T (Department: 2886)

Optics: measuring and testing

By polarized light examination

Of surface reflection

Reexamination Certificate

active

07369235

ABSTRACT:
A spectroscopic ellipsometry system directs a near infra-red (NIR) probe beam at a test sample to allow metrology to be performed on vertical structures within the test sample. Because silicon is relatively transparent to NIR light, structural information can be determined from the polarization effects produced by the test sample, in a manner similar to that used with IR spectroscopic ellipsometry systems. However, unlike IR light, which requires delicate and costly optical and measurement components (e.g., vibration-sensitive Fourier transform sensors), NIR light can be directed and detected using more robust and inexpensive components (e.g., array-based detectors), thereby making a NIR spectroscopic ellipsometry system much more affordable and usable than conventional IR spectroscopic ellipsometry systems.

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