Method and system for laser thermal processing of...

Details Method and system for laser thermal processing of... Method and system for laser thermal processing of...

2005-01-18

2005-01-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

By application of corpuscular or electromagnetic radiation

Reexamination Certificate

active

06844250

ABSTRACT:
Methods and systems for performing laser thermal processing (LTP) of semiconductor devices are disclosed. The method includes forming a dielectric cap atop a temperature-sensitive element, and then forming an absorber layer atop the dielectric layer. A switch layer may optionally be formed atop the absorber layer. The dielectric cap thermally isolates the temperature-sensitive element from the absorber layer. This allows less-temperature-sensitive regions such as unactivated source and drain regions to be heated sufficiently to activate these regions during LTP via melting and recrystallization of the regions, while simultaneously preventing melting of the temperature-sensitive element, such as a poly-gate.

REFERENCES:
patent: 5930617 (1999-07-01), Wu
patent: 6368947 (2002-04-01), Yu
patent: 6521501 (2003-02-01), Erhardt et al.
patent: 6548361 (2003-04-01), En et al.
Wolf et al. (Silicon Processing for the VLSI Era, vol. 2-Process integration, pp 318, 1990).

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