Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-08-04
2008-10-14
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S185220
Reexamination Certificate
active
07436724
ABSTRACT:
Method and system for controlling voltage and its temperature co-efficient in a non-volatile memory device having a plurality of programmable memory cells is provided. The system includes a temperature-dependent voltage generator for generating an output that is controlled independently by a first multiplier; a temperature-independent voltage generator having a constant output, wherein the constant output is controlled by a second multiplier; and an amplifier that receives the constant output of the temperature-independent voltage generator and the output of temperature-dependent voltage generator to generate a voltage that is applied to a memory cell for a read, and program-verify operation; wherein the temperature co-efficient and voltage applied to memory cells is controlled independently so that intrinsic temperature coefficient of the memory cell is substantially similar to temperature coefficient of the applied voltage.
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Office Action mailed May 14, 2008, Application No. 11/618,541 filed Dec. 29, 2006.
Response to Office Action dated Aug. 11, 2008 in U.S. Appl. No. 11/618,541.
Phung Anh
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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