Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2011-03-22
2011-03-22
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
C438S710000, C438S756000, C216S099000
Reexamination Certificate
active
07910014
ABSTRACT:
A chemical processing bath and system used in semiconductor manufacturing utilizes a dynamic spiking model that essentially constantly monitors chemical concentration in the processing bath and adds fresh chemical on a regular basis to maintain chemical concentrations at desirable levels. Etch rates and etch selectivities are maintained at desirable levels and contamination from undesirable precipitation is avoided. The system and method automatically compare concentration levels to a plurality of control limits associated with various technologies and identify the technology or technologies that may undergo processing.
REFERENCES:
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patent: 6399517 (2002-06-01), Yokomizo et al.
patent: 6699400 (2004-03-01), Ballantine et al.
patent: 2002/0173154 (2002-11-01), Tucker et al.
Zin-Chang Wei et al., Apparatus and Method for Controlling Silicon Nitride Etching Tank, U.S. Appl. No. 11/627,030, filed Jan. 25, 2007.
Hsu Li Te
Liang Jin Lin
Su Pin Chia
Su Yu-Sheng
Yeh Shih Cheng
Culbert Roberts
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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