Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-10-04
2010-11-02
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S233000, C438S655000, C438S656000, C438S664000, C257SE21619, C257SE21634
Reexamination Certificate
active
07825025
ABSTRACT:
According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and the drain, implanting, after the annealing the source and the drain, a heavy ion in the source region and the drain region, depositing a nickel layer in each of the source and drain regions, and heating the substrate to form a nickel silicide region in each of the source and drain regions by heating the substrate.
REFERENCES:
patent: 6133124 (2000-10-01), Horstmann et al.
patent: 6204132 (2001-03-01), Kittl et al.
patent: 6376372 (2002-04-01), Paranjpe et al.
patent: 2005/0250317 (2005-11-01), Koh et al.
patent: 2005/0250319 (2005-11-01), Carruthers et al.
Chen Peijun
Jain Amitabh
Kittl Jorge A.
Brady III Wade J.
Garner Jacqueline J.
Maldonado Julio J
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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