Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2008-04-15
2008-04-15
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
C438S460000, C257SE21347
Reexamination Certificate
active
11245282
ABSTRACT:
A method, system and scan lens system are provided for high-speed, laser-based, precise laser trimming at least one electrical element. The method includes generating a pulsed laser output having one or more laser pulses at a repetition rate. Each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration. The method further includes selectively irradiating the at least one electrical element with the one or more laser pulses focused into at least one spot having a non-uniform intensity profile along a direction and a spot diameter as small as about 6 microns to about 15 microns so as to cause the one or more laser pulses to selectively remove material from the at least one element and laser trim the at least one element while avoiding substantial microcracking within the at least one element. The wavelength is short enough to produce desired short-wavelength benefits of small spot size, tight tolerance and high absorption, but not so short so as to cause microcracking.
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Aghamirzadeh, Maryam, Choosing The Right Laser For Trim Quality, Hybrid Circuit Technology Electro Scientific Industries, Inc., Portland, Oregon, Jul. 1985, pp. 18-19.
Chu Yun Fee
Couch Bruce L.
Ehrmann Jonathan S.
Gu Bo
Johnson Shepard D.
Brooks & Kushman P.C.
Geyer Scott B.
GSI Group Corporation
Nikmanesh Seahvosh
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