Method and system for growing monocrystalline ingots

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

23273SP, B01J 1718

Patent

active

039532810

ABSTRACT:
A monocrystalline silicon ingot is grown from molten silicon by progressively lifting a monocrystalline seed from the molten silicon, which is disposed within a crucible in a furnace, through mounting the seed on a graphite pull shaft. The pull shaft is surrounded by a bellows, which is connected to a carriage to which the pull shaft also is connected. A seal, which is carried by the bellows structure, seals the pull shaft in its rotary motion. Because the bellows structure and the pull shaft are both connected to the carriage, there is no relative linear motion therebetween so that there is no necessity to seal for linear motion of the pull shaft. A pair of lifting mechanisms is connected to diametrically opposite sides of the carriage to support the carriage and to exert a lifting force on the pull shaft along its longitudinal axis. The crucible also must be raised as the level of the molten silicon is depleted due to the formation of the ingot on the seed at the end of the pull shaft. This is because there is an optimum heating zone, which is an isothermal zone and is relatively small, within the furnace, and it is necessary for the level of the molten silicon to be maintained within this zone. The crucible is lifted through being connected to a carriage, which is supported and lifted by a similar arrangement to that for lifting the carriage to which the pull shaft is connected.

REFERENCES:
patent: 396430 (1889-01-01), Reichel
patent: 719466 (1903-02-01), Hiss
patent: 3173765 (1965-03-01), Gobat et al.
patent: 3275417 (1966-09-01), Hunt
patent: 3650701 (1972-03-01), Forrat
patent: 3679370 (1972-07-01), Czeck et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and system for growing monocrystalline ingots does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for growing monocrystalline ingots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for growing monocrystalline ingots will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2000217

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.